Operator Name :Mr. Biplab Saha
Operator Email :bsaha.elc@gmail.com
Operator Contact :8296200430
Atomic Layer Deposition (ALD) process allows to deposit thin film in atomic layer thickness will high conformality even on high aspect ratio surfaces and high compactness (pin hole free). The system involves alternating pulses of gaseous/liquid precursors that interact with a substrate. First, a precursor is pumped into a vacuum chamber to allow it to completely react with the substrate surface so that lays down exactly one monolayer. It’s a low temperature process and wide range of functional materials (Oxides, Nitrides, Carbides, Flourides etc.) can be deposited by this process. ALD is used to develop PERC and TOPCon Solar cells and functional materials can also be deposited on various substrates for suitable electronic device fabrications.